Analysis of obtained data showed that X-ray conductivity coefficients K σ in studied crystals are regularly decreased (from 0.276 to 0.033) as with the rise of dose (E=0.75-78.0 R/min) as with the increase of values of V a on X-ray tube (V a =254-50 keV). There have been determined values of characteristic coefficients of TlGaSe 2 single crystal X-ray conductivity at different values of accelerating voltage (V a ) on the tube and corresponding doses of X-ray radiation. X-ray conductivity coefficients K σ characterising X-ray sensitivity of investigated crystals are determined as the relative change of conductivity under X-ray radiation a per dose. Intensity of X-ray radiation (E) is regulated by measurement with current variation in tube at each given value of X-ray radiation dose E (R/min) are measured by crystal dosimeter DRGZ-02. The source of X-ray radiation is the installation of X-ray diffraction analysis (URS-55a) with the BCV-2(Cu). X-ray conductivity and X-ray dosimetric characteristic measurements are carried out in low load resistance regime. The present work deals with experimental results relative to X-ray dosimetric characteristics of TlGaSe 2 crystals at 300 K. Influence of gamma-, electron and neutron radiation on photoelectric properties of TlGaSe 2 single crystals is investigated too. Photoelectric and optical properties of TlGaSe 2 single crystals were investigated in detail. TlGaSe 2 compound belongs to group of layered semiconductors of A 3 B 3 C 2 6 -type. International Nuclear Information System (INIS) X-ray dosimetry of TlGaSe2 single crystals UV-vis absorption spectra illustrate the change in opticalband gap from 3.01eVto 3.42eV on replacing the metal halide group.Raman and Hyper-Raman tensors calculations were performed based on single crystal X-ray data and the . Hg.Hgand Cl.Cl interactions are stabilizing the structures in 3D pattern. Single crystal growth, x-ray structure analysis, optical band gap This means that they can be used as electronic devices (detectors, for example) and as x-ray monochromators. These measurements show that our GaSb single crystals have a relative variation in the lattice parameter (. We compared our high-angular resolution x-ray diffraction measurements (rocking curves) with the findings predicted by the dynamical theory of x-ray diffraction. Double- crystal GaSb 333 x-ray topography shows dislocations and vertical stripes than can be associated with circular growth bands. Lang topography revealed dislocations parallel and perpendicular to the crystal's surface. We characterized GaSb single crystals containing different dopants (Al, Cd and Te), grown by the Czochralski method, by x-ray topography and high angular resolution x-ray diffraction. Structural Characterization of Doped GaSb Single Crystals by X-ray TopographyĮnergy Technology Data Exchange (ETDEWEB)
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |